Description
Title: High Tunable BaTixZr1-xO3 Films for Microwave Applications on Dielectric Substrates
Abstract: This study looked at the structural and microwave characteristics of BaTiZrO3 films that were deposited on an alumina substrate. The films were sputtered by an RF magnetron in a natural atmosphere of Ar/O2. The study of the island films during the early growth stages revealed that the pyramidal type of growth predominates. It was shown that the film’s as-deposited state is a BaZrTiO3 solid solution with less titanium than the target. The formation of a well-formed crystalline solid solution of BaZr0.3Ti0.7O3 with a predominant orientation results from the air annealing at temperatures of 1100–1200 C. (h00). The analysis of the microwave characteristics of the films produced under various conditions revealed that the best performance with a tunability of 4.6 (78%), a Q-factor of 18 to 40 at 2 GHz, and these other characteristics was accomplished at an annealing temperature of 1150 C.
Keywords: barium titanate–zirconate; rf magnetron sputtering; initial stages of growth; microwave properties
Paper Quality: SCOPUS / Web of Science Level Research Paper
Subject: Chemistry
Writer Experience: 20+ Years
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